IRGI4085-111PBF

Description：IGBT TRENCH 330V 28A TO220AB FP
Series：-

SKU:05d69bac4d11 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 330V 28A TO220AB FP
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：330 V
Current - Collector (Ic) (Max)：28 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：1.5V @ 28V, 15A
Power - Max：38 W
Switching Energy：-
Input Type：Standard
Gate Charge：84 nC
Td (on/off) @ 25°C：48ns/180ns
Test Condition：196V, 25A, 10Ohm
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220AB Full-Pak
Grade：-
Qualification：-

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IRGI4085-111PBF

Overview

The IRGI4085-111PBF is a single N-channel IGBT from Infineon Technologies, housed in a TO-220AB Full-Pak package. It features a collector-emitter breakdown voltage of 330 V and a continuous collector current of 28 A at 25°C. The device supports junction temperatures up to 150°C and has a maximum power dissipation of 38 W. Designed for through-hole mounting, it utilizes Trench technology to optimize switching performance and conduction losses.

Feature Summary

Single N-channel IGBT configuration
Trench gate technology implementation
Through-hole TO-220AB Full-Pak packaging

Applications

Motor control drives
Power supply units
Industrial inverters

Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm that the TO-220AB Full-Pak package dimensions match the target PCB footprint. Ensure thermal management solutions account for the 38 W power dissipation limit. Check for valid cross-reference alternatives if new production is required.

Selection Notes

Select this component for applications requiring 330 V blocking capability and moderate current handling. The TO-220AB package suits prototyping or low-volume manufacturing where through-hole reliability is prioritized. Evaluate thermal resistance requirements against the 38 W dissipation rating to ensure safe operating junction temperatures under load conditions.

Part Context

This part belongs to Infineon's discrete semiconductor portfolio, specifically within the IGBT category. It represents legacy technology utilizing Trench design principles. The manufacturer transitioned focus toward newer packages and higher voltage ratings, leading to the obsolescence of this specific TO-220 variant.