IRGI4090PBF

Description：IGBT TRENCH 300V 21A TO220AB FP
Series：-

SKU:62619c7aa652 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 300V 21A TO220AB FP
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：300 V
Current - Collector (Ic) (Max)：21 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：1.94V @ 15V, 30A
Power - Max：34 W
Switching Energy：-
Input Type：Standard
Gate Charge：34 nC
Td (on/off) @ 25°C：20ns/99ns
Test Condition：240V, 11A, 10Ohm
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220AB Full-Pak
Grade：-
Qualification：-

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IRGI4090PBF

Overview

The IRGI4090PBF is a trench IGBT designed for Plasma Display Panel applications. It features advanced technology to achieve low VCE(on) and low EPULSE rating per silicon area, improving panel efficiency. Key parameters include a collector-emitter breakdown voltage of 300V, a continuous collector current of 140A at 25°C case temperature, and a maximum operating junction temperature of 150°C. The device utilizes a TO-220AB Full-Pak package.

Feature Summary

Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency
High repetitive peak current capability

Applications

Plasma Display Panels
Sustain circuits
Energy Recovery circuits

Procurement Notes

Verify the component status as the datasheet indicates it was designed for the industrial market. Confirm that the TO-220AB Full-Pak package is suitable for your mounting requirements, as surface mount application is not recommended. Ensure compatibility with the specified gate drive voltages and thermal management needs for high repetitive peak currents.

Selection Notes

Select this component when designing for Plasma Display Panels requiring robust performance under high repetitive peak currents. Consider the 150°C operating junction temperature limit and the specific thermal resistance characteristics. Evaluate the low VCE(on) and EPULSE benefits for overall panel efficiency improvements compared to standard IGBTs.

Part Context

This IGBT belongs to the Infineon Technologies lineup, specifically engineered for the demanding environment of Plasma Display Panels. It leverages trench technology to enhance efficiency through reduced saturation voltage and energy per pulse metrics, distinguishing it from general-purpose switching devices.