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The IRGP30B120KD-EP is a 1200V N-channel Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, housed in an extended lead TO-247AD package. It utilizes Non Punch Through (NPT) technology to achieve low saturation voltage and positive temperature coefficients for improved current sharing. The device supports a continuous collector current of 60A at 25°C case temperature and withstands pulsed currents up to 120A. It features a 10μs short-circuit capability and operates within a junction temperature range of -55°C to +150°C.
Verify the component status as this part may be subject to obsolescence or lifecycle changes. Confirm that the specific ordering suffix matches the required package variant and compliance standards. Ensure the supplier provides valid traceability documentation and original manufacturer certification to guarantee authenticity and prevent counterfeit risks during acquisition.
Select this component for designs requiring high-voltage isolation with integrated freewheeling capabilities. The extended leads are advantageous for through-hole mounting where mechanical stability is critical. Evaluate the thermal resistance parameters against the expected heat dissipation requirements to ensure the junction temperature remains within safe operating limits under maximum load conditions.
This device belongs to the industrial-grade IGBT family from Infineon Technologies, formerly International Rectifier. It is designed for robust performance in demanding power conversion environments. The TO-247AD package provides a standardized footprint for high-current modules, ensuring compatibility with existing heatsinking infrastructure and PCB layouts used in medium-to-high power electronic systems.
IRGP30B120K
The device has a specified short-circuit withstand capability of 10 microseconds under defined test conditions.
The ultrasoft recovery characteristics significantly reduce reverse recovery energy and peak current, which allows for less snubber circuitry and lowers electromagnetic interference.
The maximum operating junction temperature for this component is +150°C.