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Product Detailed Parameters
- Description：IGBT NPT 1200V 60A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Bag
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 60A
- Power - Max：300 W
- Switching Energy：1.07mJ (on), 1.49mJ (off)
- Input Type：Standard
- Gate Charge：169 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr)：300 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRGP30B120KDPBF is a 1200 V N-channel Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, housed in an extended lead TO-247AD package. It utilizes Non Punch Through (NPT) technology to achieve low saturation voltage and positive temperature coefficient for current sharing. The device supports a continuous collector current of 60 A at 25°C case temperature and withstands pulsed currents up to 120 A. It features a 10 μs short circuit capability and rugged transient performance.
Feature Summary
- Non Punch Through (NPT) technology providing low VCE(on) and positive temperature coefficient
- Ultrafast soft recovery diode characteristics significantly reducing snubber requirements
- Extended lead TO-247AD package designed for easier mounting and improved thermal handling
- Square Reverse Bias Safe Operating Area (RBSOA) ensuring rugged transient performance
Applications
- Motor control applications
- Industrial motor drives
- Switched mode power supplies
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm lead-free status and packaging format. Confirm that the component matches the exact part number required for your design specifications. Check for any recent updates to the datasheet version or qualification standards before finalizing procurement.
Selection Notes
Select this component for designs requiring high voltage isolation and robust switching capabilities. Consider the thermal resistance values when designing heatsinking solutions. Ensure gate drive voltages remain within the specified ±20 V limit to prevent damage. Evaluate the total switching losses at the intended operating frequency and load conditions.
Part Context
This device belongs to the family of insulated gate bipolar transistors featuring integrated fast recovery diodes. It is designed for industrial applications where reliability and efficiency are critical. The TO-247AD package provides a balance between electrical performance and mechanical ease of installation compared to standard packages.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains compatible voltage ratings, current capabilities, and package dimensions. Verify that alternative components meet the same industrial qualification standards and thermal requirements.
