SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGP4050 is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes TRENCH IGBT technology and is housed in a TO-247AC-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 90 A at 25°C, with a peak pulsed current capacity of 140 A. Key electrical parameters include a saturation voltage of 2.1 V, power dissipation of 454 W, and an operating temperature range from -55°C to +175°C.
This component is officially listed as End-of-Life (EOL) or discontinued by the manufacturer. Availability is restricted, and distributors may not stock this item. Verification of current lifecycle status and sourcing channels is required before design commitment due to potential supply constraints.
Select this part for high-current applications requiring 600V blocking capability and robust thermal handling. Ensure the application circuit can accommodate the specific gate drive requirements and thermal management needs associated with its TO-247AC-3 package and 454 W power dissipation rating.
The IRGP4050 belongs to Infineon's portfolio of discrete IGBTs designed for medium-to-high power conversion. It represents a legacy product line within the company's broader semiconductor offerings, often superseded by newer generations with improved efficiency metrics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the EOL status, engineers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.