IRGP4066DPBF

$6.28

Description：IGBT TRENCH 600V 140A TO-247AC
Series：-

SKU:b9ef20624648 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 140A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Bulk,Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：140 A
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
Power - Max：454 W
Switching Energy：2.47mJ (on), 2.16mJ (off)
Input Type：Standard
Gate Charge：150 nC
Td (on/off) @ 25°C：50ns/200ns
Test Condition：400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)：155 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC

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IRGP4066DPBF

Overview

The IRGP4066DPbF is an n-channel Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, designed for industrial applications. It features Trench IGBT technology to achieve low saturation voltage and switching losses. The device supports a collector-to-emitter voltage of 600V and a nominal current of 75A. Maximum continuous collector current reaches 140A at 25°C case temperature. It operates up to a maximum junction temperature of 175°C and provides a short-circuit safe operating area duration of at least 5μs.

Feature Summary

Utilizes Low VCE(ON) Trench IGBT Technology
Features Ultrafast Soft Recovery Diode
Supports High Junction Temperature Operation

Applications

Industrial Motor Drives
Switching Power Supplies
Inverter Circuits

Procurement Notes

Verify the specific package variant against design requirements. The TO-247AC package corresponds to the standard IRGP4066DPbF designation, while the TO-247AD package corresponds to the IRGP4066D-EPbF variant. Confirm that the selected package aligns with the intended mounting method and thermal management strategy before procurement.

Selection Notes

Select this component for high-efficiency power conversion requiring rugged transient performance. The positive temperature coefficient of VCE(on) facilitates excellent current sharing in parallel operation. Ensure gate drive circuits accommodate the specified threshold voltage range and total gate charge characteristics for optimal switching speed control.

Part Context

This single IGBT integrates a fast recovery anti-parallel diode within a three-terminal TO-247 package. It belongs to the Infineon product line optimized for industrial markets. The device combines high voltage blocking capability with robust short-circuit withstand time, making it suitable for demanding power electronics environments.

Replacement Considerations

The IRGP4066D-EPbF serves as a verified alternative part number representing the same electrical specifications but utilizing the TO-247AD package instead of the TO-247AC package found on the primary model.