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The IRGP4066PbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes low VCE(ON) Trench IGBT technology to achieve high efficiency and low switching losses. The device features a maximum collector-to-emitter voltage of 600V and a nominal current rating of 75A, with a continuous collector current capability of 140A at 25°C case temperature. It supports a short circuit withstand time of at least 5μs and operates up to a maximum junction temperature of 175°C.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm package type and lead-free status. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure the supplier provides valid traceability documentation for industrial-grade discrete semiconductors.
Select this component for applications requiring rugged transient performance and excellent current sharing in parallel operation. The positive VCE(ON) temperature coefficient facilitates stable parallel configurations. Consider the thermal resistance characteristics when designing heat sinks for high-power dissipation scenarios.
This part belongs to the IRGP4066 series of trench-gate IGBTs designed for medium-frequency switching applications. It is engineered to provide high system efficiency through optimized conduction and switching losses. The device is intended for industrial markets where reliability under harsh electrical conditions is critical.
Consult official substitution guides for equivalent trench-gate IGBTs with matching voltage and current ratings. Verify pinout compatibility and thermal resistance parameters before replacing the original component in existing designs.
The device has a minimum short circuit withstand time of 5 microseconds.
It features a positive VCE(ON) temperature coefficient, which aids in current sharing during parallel operation.
The maximum operating junction temperature is 175°C.