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The IRGP4068D-EPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, designed for high-power switching applications. It features a Trench technology structure with an integrated ultra-low forward voltage drop diode. The device operates with a collector-emitter voltage of 600 V and supports a continuous collector current of 96 A at 25°C. Maximum power dissipation is rated at 330 W, with a maximum operating junction temperature of 175°C. Key electrical parameters include a gate charge of 95 nC and an off-state switching energy of 1.28 mJ. The component utilizes a TO-247AD through-hole package.
Verify the exact suffix EPBF confirms lead-free compliance and specific binning requirements against the original design specifications. Confirm that the TO-247AD package dimensions match the thermal management and mechanical constraints of the target PCB layout. Ensure the supplier provides valid traceability documentation for the E-series product line to guarantee authenticity and performance consistency.
Select this component when designing circuits requiring high current handling with minimal conduction losses in the freewheeling path. The integrated ultra-low VF diode makes it suitable for resonant and soft-switching architectures where reverse recovery characteristics are critical. Evaluate thermal resistance requirements carefully given the 330 W dissipation rating and ensure adequate heatsinking for sustained operation near the 175°C limit.
This part belongs to Infineon's IGBT family featuring Trench technology, optimized for high-efficiency power conversion. The 'EP' designation indicates it is an E-Series product, typically implying enhanced reliability or specific automotive/industrial qualification standards compared to standard commercial grades. It serves as a robust solution for medium-to-high power density applications requiring reliable switching performance.
Direct substitutes within the same series may include variants with adjusted current ratings or switching speeds, provided the pinout and package remain compatible. Verify that any replacement maintains the ultra-low VF diode characteristic if soft-switching performance is required. Cross-reference thermal and electrical limits to ensure no derating compromises system reliability.