IRGP4262DPBF

Overview

The IRGP4262DPBF is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It utilizes trench wafer technology to achieve low conduction and switching losses, making it suitable for high-efficiency power conversion. The device is co-packaged with a soft-recovery anti-parallel diode to optimize performance in hard-switching applications. Designed for robust operation, it features a 5µs short-circuit rating and a maximum junction temperature of 175°C. The component is housed in a TO-247AC package, providing reliable thermal management for industrial and commercial power systems.

Feature Summary

• Trench wafer technology reduces both conduction and switching energy losses for improved system efficiency.
• Co-packaged with a fast soft-recovery diode to minimize reverse recovery charge and associated switching losses.
• Engineered with a positive Vce(on) temperature coefficient to facilitate safe parallel operation without current derating.
• Includes a 5µs short-circuit withstand capability to protect the device during fault conditions.

Applications

• Uninterruptible Power Supplies (UPS)
• Industrial Motor Drives
• Solar Inverters
• High-Frequency Welding Equipment

Procurement Notes

Verify the manufacturer source carefully, as International Rectifier was acquired by Infineon Technologies. Ensure the ordering suffix matches the required RoHS compliance status. Confirm the specific package variant, such as TO-247AC or TO-247AD, against your PCB footprint requirements. Request the latest datasheet revision to ensure alignment with current electrical characteristics and thermal parameters before finalizing procurement.

Selection Notes

Select this component for applications requiring 600V blocking voltage and moderate current handling within the IRGP42xx series. Compare the specific collector current ratings against the IRGP4263D or IRGP4264D variants if higher current capacity is needed. Evaluate the thermal resistance requirements to determine if additional heatsinking is necessary for the intended duty cycle. Ensure the gate drive circuitry supports the input capacitance and recommended gate voltage levels specified in the official datasheet.

Part Context

This IGBT belongs to the IRGP42xx series, which represents International Rectifier's expansion into robust, high-speed 600V solutions. The series is characterized by optimized trench wafer technology designed for switching frequencies between 8kHz and 30kHz. These devices are positioned to replace older generation IGBTs in applications demanding higher efficiency and lower electromagnetic interference (EMI).

Replacement Considerations

Direct substitutes within the same family include the IRGP4263D and IRGP4264D, which offer higher current ratings but share similar packaging and voltage specifications. Cross-brand replacements should be evaluated based on matching Vces, Ic ratings, and thermal resistance values. Verify that any alternative device maintains compatibility with the existing gate drive requirements and package dimensions.

FAQ

What is the short-circuit rating of the IRGP4262DPBF?

The device is rated for a short-circuit duration of 5 microseconds, allowing it to withstand fault currents briefly without damage.

Does the IRGP4262DPBF include an integrated diode?

Yes, it is co-packaged with a soft-recovery anti-parallel diode to improve switching performance and reduce reverse recovery losses.

What is the maximum operating junction temperature?

The maximum junction temperature (Tj) for this component is 175°C, supporting high-temperature industrial environments.