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The IRGP4263D-EPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It utilizes Trench and Field-Stop technology to achieve low conduction and switching losses. The device features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 50A at 100°C. Typical saturation voltage is 1.85V at 75A. It is housed in a lead-free TO-247AD package with a thermal resistance from junction to case of 0.56°C/W.
Verify the specific suffix 'EPBF' confirms the enhanced product variant and lead-free status. Confirm the manufacturer source is Infineon or authorized distributors. Check for date codes and lot traceability to ensure component authenticity and compliance with current environmental regulations.
Select this component for applications requiring 600V blocking voltage and moderate current handling up to 50A. Ensure the gate drive circuit provides appropriate voltage levels for the specified Vge threshold. Verify that the thermal management design can handle the power dissipation defined by the on-state voltage and load current conditions.
This IGBT belongs to the IRGP series designed for high-efficiency power conversion. It complements other devices in the lineup by offering a balance between speed and conduction loss. The TO-247AD package allows for direct mounting to heatsinks, facilitating efficient heat transfer in compact power modules.
Direct replacements include the IRGP4266D and IRGP4263D without the EPBF suffix if lead-free compliance is not strictly required for the specific assembly process. Cross-reference datasheets for Vce(sat) and switching times to ensure electrical compatibility in existing designs.