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The IRGP4266D-EPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features a collector-emitter breakdown voltage of 650V and a continuous collector current rating of 140A at 100°C. The device utilizes Trench technology to achieve a low saturation voltage of 2.1V at 75A. Packaged in a lead-free TO-247AD housing, it supports a maximum junction temperature of 175°C and includes an integrated anti-parallel diode.
Verify the specific suffix against official Infineon documentation to confirm package variant and compliance status. Ensure the component matches the required thermal resistance and pinout configuration for the target PCB layout. Cross-reference the manufacturer's latest datasheet revision to confirm electrical characteristics and handling instructions prior to integration.
Select this component for high-power applications requiring robust switching at 650V. The 140A rating suits medium-to-high current loads. Consider the thermal management requirements associated with the TO-247AD package. Evaluate system efficiency needs against the specific Vce(on) and switching loss characteristics defined in the official datasheet.
This IGBT belongs to the IRGP series, designed for high-efficiency power conversion. The EPBF suffix indicates environmental compliance, specifically RoHS standards. The device is part of Infineon's portfolio following the acquisition of International Rectifier, maintaining legacy specifications for established industrial designs.
Consult official Infineon substitution guides for verified equivalents. Direct replacements must match the 650V/140A rating and TO-247AD package. Verify compatibility with existing gate drive circuits and thermal interface materials before implementation.