IRGP4266PBF

Overview

The IRGP4266PBF is a 650V N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It utilizes Trench and Field-Stop technology to achieve low saturation voltage and fast switching characteristics. The device is housed in a TO-247AD package, providing robust thermal performance for high-power applications. Key electrical parameters include a collector-emitter breakdown voltage of 650V and a continuous collector current rating of 38A at 100°C. The saturation voltage (Vce(on)) is typically 1.95V at 75A, ensuring efficient conduction. With a maximum junction temperature of 175°C and a thermal resistance from junction to case of 0.55°C/W, the component supports reliable operation in demanding industrial environments.

Feature Summary

• Trench and Field-Stop technology for optimized low Vce(on) and fast switching
• Positive temperature coefficient of Vce(on) facilitating safe parallel operation
• Short-circuit capability with a rated duration of 3 microseconds
• RoHS compliant construction within a standard TO-247AD leaded package

Applications

• Uninterruptible Power Supplies (UPS)
• Industrial motor drives and inverters
• High-frequency welding equipment
• Solar power inverters

Procurement Notes

Verify the manufacturer origin, as International Rectifier was acquired by Infineon. Confirm the suffix 'PBF' indicates lead-free compliance per RoHS standards. Ensure the package matches the specified TO-247AD footprint. Request the official datasheet to validate specific electrical limits against your design requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring 650V blocking voltage and moderate current handling up to 38A. Consider the 1.95V Vce(on) for conduction loss calculations at high currents. Evaluate the 3µs short-circuit withstand time for protection circuit design. Compare thermal resistance values against your heatsinking capabilities to ensure junction temperatures remain within the 175°C limit during peak load conditions.

Part Context

This IGBT belongs to the IRGP42xx series, designed for high-efficiency power conversion. It complements complementary diodes like the IRGBC20D in half-bridge configurations. The device represents Infineon's commitment to improving system efficiency through advanced trench technologies in the 600V class segment.

Replacement Considerations

Direct substitutes may include other 650V, ~40A Trench IGBTs in TO-247 packages from manufacturers like Mitsubishi or Fuji Electric. Verify pinout compatibility and thermal resistance equivalence. Cross-reference switching speeds and Vce(on) tolerances to ensure circuit stability without modification.