SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGP4620DPBF is a 600V N-channel ultrafast Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It utilizes trench wafer technology to minimize conduction and switching losses, making it suitable for high-frequency operation between 8kHz and 30kHz. The device features a 5µs short-circuit rating and is co-packaged with a soft-recovery diode to optimize system performance. Key electrical parameters include a collector-emitter saturation voltage of 1.6V at 25°C, a continuous collector current of 40A at 100°C, and a thermal resistance from junction to case of 0.60°C/W.
Verify the manufacturer designation on the component marking, as International Rectifier operations are now part of Infineon Technologies. Confirm the package type matches TO-247AC or TO-247AD specifications. Ensure the suffix indicates lead-free compliance if required by your assembly process. Cross-reference the specific datasheet revision to confirm parameter consistency with your design requirements.
Select this component for designs requiring high reliability in medium-power conversion systems. The integrated soft-recovery diode simplifies circuit topology by eliminating external freewheeling diodes. Consider the 0.60°C/W thermal resistance for heatsink calculations. The positive Vce(on) temperature coefficient ensures stable current sharing when multiple devices are used in parallel configurations.
This IGBT belongs to the WARP2 product family, which focuses on high-efficiency power switching solutions. It complements other high-voltage IGBTs like the IRGP4640D and IRGP4650D within the same series. The device represents International Rectifier's commitment to optimizing power density and thermal management in industrial and renewable energy applications through advanced semiconductor packaging.
Public confirmed substitute part numbers: IRGP4640DPBF, IRGP4650DPBF, IRGP4660DPBF.