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The IRGP4630DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes Trench and Fieldstop technology to achieve low saturation voltage and switching losses. The device features a TO-247AC package for through-hole mounting. Key electrical ratings include a collector-emitter voltage of 600V, a continuous collector current of 47A at 25°C case temperature, and a maximum junction temperature of 175°C. It supports short circuit withstand times of at least 5µs.
Verify the specific ordering suffix against official documentation to confirm the exact package type and standard packing quantity. Confirm RoHS compliance status and lead-free assembly requirements prior to procurement. Ensure that thermal management designs account for the specified junction-to-case thermal resistance values under intended operating conditions.
Select this component for applications requiring high efficiency across wide switching frequency ranges. The device is suitable for designs needing robust short-circuit protection capabilities up to 5µs. Consider the TO-247AC package dimensions and mounting torque specifications when designing the PCB footprint and heatsink interface.
This part belongs to the IRGx4630D(-E)PbF family of IGBTs from Infineon Technologies. The family includes variants such as IRGB4630DPbF in a TO-220AB package and IRGS4630DPbF in a D2Pak package. All variants share identical core electrical characteristics but differ in physical packaging and standard packing quantities.
IRGB4630DPbF
The device has a minimum short circuit withstand time of 5µs at a junction temperature of 175°C.
It features a positive VCE(on) temperature coefficient, which facilitates excellent current sharing in parallel configurations.
The typical diode forward voltage drop is 2.3V at a forward current of 18A and a junction temperature of 25°C.