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Product Detailed Parameters
- Description：IGBT 600V 65A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：65 A
- Current - Collector Pulsed (Icm)：72 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 24A
- Power - Max：250 W
- Switching Energy：115µJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：75 nC
- Td (on/off) @ 25°C：41ns/104ns
- Test Condition：400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr)：89 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
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Overview
The IRGP4640DPBF is an Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a TO-247AC package and supports a collector-to-emitter voltage of 600 V. The device provides a continuous collector current of 65 A at 25°C case temperature and handles a pulse collector current of 72 A. Maximum power dissipation reaches 250 W at 25°C. The typical saturation voltage is 1.60 V at 24 A, and the gate threshold voltage ranges from 4.0 V to 6.5 V.
Feature Summary
- Integrates an ultrafast soft recovery diode for efficient switching performance.
- Features a square Reverse Bias Safe Operating Area (RBSOA) for rugged hard switching reliability.
- Includes a positive VCE(on) temperature coefficient to facilitate excellent current sharing in parallel configurations.
- Supports short circuit protection schemes with a defined 5 µs Short Circuit Safe Operating Area.
Applications
- Industrial motor drives
- Inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
Procurement Notes
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the part matches the specified TO-247AC package and lead-free RoHS compliance status. Check for any specific handling requirements related to electrostatic discharge during storage and installation. Ensure the sourcing channel provides valid traceability documentation for industrial qualification standards.
Selection Notes
Select this component for applications requiring high efficiency across wide operating ranges due to low conduction and switching losses. Consider the 175°C maximum junction temperature capability for thermal management designs. Evaluate the 600 V rating against system voltage peaks. Assess the need for parallel operation benefits provided by the positive temperature coefficient.
Part Context
This IGBT belongs to the IRGx4640D family, which includes variants like IRGS4640DPbF and IRGB4640DPbF. These devices share identical electrical characteristics but differ in physical packaging options such as D2Pak, TO-220AB, and TO-262. The IRGP4640DPBF specifically utilizes the TO-247AC form factor.
Replacement Considerations
Direct substitutes within the same electrical specification include IRGP4640D-EPBF, which uses the TO-247AD package. Other family members like IRGS4640DPbF offer equivalent performance in different mechanical footprints.
FAQ
What is the maximum short circuit time for the IRGP4640DPBF?
The device supports a short circuit time of 5 microseconds under specified conditions.
Does the IRGP4640DPBF have a negative or positive temperature coefficient?
It exhibits a positive VCE(on) temperature coefficient, which aids in current sharing when paralleling multiple units.
What type of diode is integrated with this IGBT?
It integrates an ultrafast soft recovery diode designed to minimize reverse recovery losses.
