SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGP4760DPBF is a 1200 V insulated gate bipolar transistor (IGBT) manufactured by International Rectifier. It utilizes trench wafer technology and is co-packaged with a soft-recovery diode. The component is optimized for switching frequencies between 8 kHz and 30 kHz and features a 5 µs short-circuit rating.
Verify the manufacturer datasheet to confirm electrical ratings and pinout compatibility before integration. Ensure thermal management solutions align with the specified operating conditions. Cross-reference the part number suffix to verify package type and material compliance requirements.
Select this component for designs requiring robust short-circuit withstand capability and efficient switching at moderate frequencies. Evaluate the voltage and current ratings against the specific load requirements of the target application circuit.
This device belongs to the 600-V to 1200-V IGBT family from International Rectifier, designed for power conversion systems. It shares architectural similarities with other trench-based IGBTs in the portfolio, targeting industrial and renewable energy markets.
Consult official substitution guides for compatible alternatives. Verify that any substitute matches the voltage class, package dimensions, and switching characteristics.