IRGP4790DPBF

Description：IGBT 650V 140A TO-247AC
Series：-

SKU:5818289ea6c3 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 140A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：140 A
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
Power - Max：455 W
Switching Energy：2.5mJ (on), 2.2mJ (off)
Input Type：Standard
Gate Charge：210 nC
Td (on/off) @ 25°C：50ns/200ns
Test Condition：400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)：170 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC

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IRGP4790DPBF

Overview

The IRGP4790DPBF is a 650 V n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a maximum continuous collector current of 140 A at 25°C and 90 A at 100°C case temperature. The device operates within a junction temperature range of -40°C to +175°C and supports a short-circuit withstand time of 5.5 µs. Packaged in a TO-247AC through-hole housing, it offers low saturation voltage and switching losses for high-efficiency power conversion.

Feature Summary

Low VCE(ON) and switching losses for high efficiency
5.5µs short circuit safe operating area capability
Positive VCE(ON) temperature coefficient for parallel operation
Ultrafast soft recovery diode integration

Applications

Industrial Motor Drive
Uninterruptible Power Supply (UPS)
Solar Inverters
Welding

Procurement Notes

Verify the specific package variant required during procurement: IRGP4790DPbF utilizes the TO-247AC package, while the IRGP4790D-EPbF variant uses the TO-247AD package. Confirm RoHS compliance status and industrial qualification level against JEDEC JESD47F standards. Ensure ordering suffixes match the intended thermal and mechanical specifications for the target application design.

Selection Notes

Select this component for applications requiring robust transient performance and high reliability up to 175°C junction temperature. The positive temperature coefficient of VCE(ON) facilitates excellent current sharing when paralleling multiple units. Consider the 5.5µs short-circuit rating for fault protection schemes and the square RBSOA for demanding inductive load conditions.

Part Context

This IGBT belongs to International Rectifier's expanded 600V channel ultrafast IGBT series, designed to optimize system performance through reduced conduction and switching losses. Utilizing thin wafer technology, the device complements low reverse recovery charge diodes to enhance overall converter efficiency in medium-power industrial and renewable energy systems.