IRGP4790PBF

$3.49

Description：IGBT 650V 140A TO-247AC
Series：-

SKU:0bfa940c22b6 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 140A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube,Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：140 A
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
Power - Max：455 W
Switching Energy：2.5mJ (on), 2.2mJ (off)
Input Type：Standard
Gate Charge：210 nC
Td (on/off) @ 25°C：50ns/200ns
Test Condition：400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC

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IRGP4790PBF

Overview

The IRGP4790PbF is a 650 V, 140 A N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes TO-247AC through-hole packaging and supports a maximum junction temperature of +175°C. The device features a typical collector-to-emitter saturation voltage of 1.7 V at 75 A and a total gate charge of 140 nC. Designed for high-efficiency switching, it offers a short-circuit withstand time of 5.5 µs and operates within a frequency range of 8 to 30 kHz.

Feature Summary

Low VCE(ON) and switching losses for high efficiency
5.5 µs short circuit safe operating area
Positive VCE(ON) temperature coefficient for parallel operation
Rugged transient performance

Applications

Industrial Motor Drive
UPS
Solar Inverters
Welding

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the component matches the required industrial qualification level and RoHS compliance standards before integration into designs. Ensure thermal management aligns with the specified junction-to-case resistance limits.

Selection Notes

Select this IGBT for applications requiring robust short-circuit protection and high current handling capabilities. The positive temperature coefficient facilitates reliable parallel operation without complex current balancing circuits. Evaluate thermal resistance requirements carefully to maintain junction temperatures within the specified operational limits during high-load conditions.

Part Context

This component belongs to the IRGP series of high-power IGBTs from Infineon Technologies. It represents an evolution in trench field-stop technology designed to minimize conduction and switching losses. The part is engineered for demanding power conversion environments where reliability and thermal stability are critical design parameters.