IRGP6630DPBF

Description：IGBT 600V 47A TO-247AC
Series：-

SKU:08bf8a136ed5 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 47A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：47 A
Current - Collector Pulsed (Icm)：54 A
Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 18A
Power - Max：192 W
Switching Energy：75µJ (on), 350µJ (off)
Input Type：Standard
Gate Charge：30 nC
Td (on/off) @ 25°C：40ns/95ns
Test Condition：400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr)：70 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC

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IRGP6630DPBF

Overview

The IRGP6630DPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a 600V collector-to-emitter voltage rating and operates within a junction temperature range of -40°C to +175°C. The device supports a continuous collector current of 47A at 25°C case temperature and 30A at 100°C. It utilizes TO-247AC or TO-247AD through-hole packages and includes a 5µs short-circuit safe operating area capability.

Feature Summary

Optimized for full bridge hard switching converters with low saturation voltage and switching losses
Features a square Reverse Bias Safe Operating Area (RBSOA) and positive VCE(on) temperature coefficient for reliable parallel operation
Integrated ultrafast soft recovery diode designed specifically for welding and H-bridge converter applications

Applications

Welding equipment
H-Bridge converters
Full bridge hard switching converters

Procurement Notes

Verify the specific package variant required during procurement: IRGP6630DPbF corresponds to the TO-247AC package, while IRGP6630D-EPbF corresponds to the TO-247AD package. Confirm that the selected component meets RoHS compliance standards and Industrial qualification levels as specified in the official datasheet documentation.

Selection Notes

Select this component for designs requiring rugged hard switching performance and high power capability up to 175°C. Ensure the gate drive circuitry accommodates the specified total gate charge and switching times. Verify thermal management solutions can handle the maximum power dissipation ratings under the intended load conditions and ambient temperatures.

Part Context

This IGBT belongs to the UltraFast series from International Rectifier, now part of Infineon Technologies. It is designed to provide high efficiency across a wide range of applications. The device combines the fast switching characteristics of an IGBT with the optimized recovery properties of a co-packaged diode, targeting industrial power conversion systems.