IRGP6640DPBF

Description：IGBT 600V 53A TO-247AC
Series：-

SKU:50ef28e10183 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 53A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：53 A
Current - Collector Pulsed (Icm)：72 A
Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 24A
Power - Max：200 W
Switching Energy：300µJ (on), 840µJ (off)
Input Type：Standard
Gate Charge：50 nC
Td (on/off) @ 25°C：40ns/100ns
Test Condition：400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)：70 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC

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IRGP6640DPBF

Overview

The IRGP6640DPbF is a single n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a 600V collector-emitter voltage rating and a continuous collector current of 53A at 25°C case temperature. The device utilizes trench wafer technology to achieve low saturation voltage and switching losses. It supports a maximum junction temperature of 175°C and offers a 5µs short-circuit capability.

Feature Summary

Low VCE(ON) and switching losses for high efficiency
Optimized diode for full bridge hard switch converters
Square RBSOA and 175°C maximum temperature
5µs short circuit protection capability

Applications

Welding
H Bridge Converters

Procurement Notes

Verify the specific ordering suffix against the datasheet base part number table. Confirm that the component matches the required package type, as variations exist between TO-247AC and TO-247AD configurations. Ensure the procurement source provides original manufacturer documentation to validate authenticity and compliance status.

Selection Notes

Select this component for applications requiring robust hard switching performance and high power capability. The positive VCE(ON) temperature coefficient facilitates excellent current sharing in parallel operation. Consider the thermal resistance values when designing heat sinks to maintain the junction temperature within the specified operating range.

Part Context

This IGBT belongs to the TRENCHSTOP series, which employs trench wafer technology to reduce conduction and switching losses. The product line targets industrial motor drives, welding, and solar applications. The integration of a soft-recovery diode optimizes the device for use in resonant and hard-switched converter topologies.