IRGP6650DPBF

IRGP6650DPBF

$2.49
  • Description:IGBT 600V 80A TO-247AC
  • Series:-

SKU:8d58ead20d23 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT 600V 80A TO-247AC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):105 A
  • Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 35A
  • Power - Max:306 W
  • Switching Energy:300µJ (on), 630µJ (off)
  • Input Type:Standard
  • Gate Charge:75 nC
  • Td (on/off) @ 25°C:40ns/105ns
  • Test Condition:400V, 35A, 10Ohm, 15V
  • Reverse Recovery Time (trr):50 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

Download product information

IRGP6650DPBF

Overview

The IRGP6650DPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum continuous collector current of 80 A and a maximum collector-emitter voltage of 600 V. The device operates within a junction temperature range of -40 °C to +175 °C and has a maximum power dissipation of 306 W. It utilizes a TO-247AC package with three pins for through-hole mounting. The gate-emitter voltage rating is ±20 V, and the gate capacitance is 2220 pF. Designed for switching speeds between 8 kHz and 30 kHz, this single-channel transistor is suitable for high-power applications requiring robust thermal performance.

Feature Summary

  • High-voltage capability with 600 V collector-emitter breakdown
  • Robust thermal management supporting up to 175 °C junction temperature
  • Through-hole mounting in a standard TO-247AC package

Applications

  • Industrial motor drives
  • Switched-mode power supplies
  • Inverter circuits

Procurement Notes

Verify the specific ordering suffix DPBF against official Infineon documentation to confirm RoHS compliance and lead-free status. Ensure the procurement channel provides valid traceability for the component batch. Cross-reference the manufacturer part number with authorized distributor databases to prevent counterfeit risks. Confirm that the package type matches the intended PCB footprint requirements before finalizing orders.

Selection Notes

Select this component when designing circuits requiring 600 V blocking voltage and 80 A continuous current handling. The TO-247AC package facilitates effective heat sinking for high-power dissipation scenarios. Consider the 8–30 kHz switching frequency range when determining gate drive requirements and thermal management strategies. Ensure the application environment supports the specified operating temperature range from -40 °C to +175 °C.

Part Context

This IGBT belongs to Infineon's discrete power semiconductor portfolio, designed for medium-to-high power conversion applications. It complements other components in motor control and power supply systems where reliable switching at moderate frequencies is required. The TO-247AC form factor is widely adopted in industrial equipment for its mechanical stability and thermal efficiency.

Replacement Considerations

Consult official Infineon replacement guides for direct equivalents. Verify pinout compatibility and electrical parameters such as VCEO and IC before substituting. Generic cross-references may not match the specific switching characteristics or thermal resistance values.

IRGP6650DPBFIRGP6650DPBF
$2.49
Buy Now