IRGP6690DPBF

Overview

The IRGP6690DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes TRENCHSTOP technology and is housed in a TO-247AC package for through-hole mounting. The device features a collector-emitter voltage rating of 600 V and supports continuous collector currents of 140 A at 25°C case temperature and 90 A at 100°C. It offers a maximum power dissipation of 483 W at 25°C and operates within a junction temperature range of -40°C to +175°C.

Feature Summary

• Optimized low saturation voltage and switching losses for high efficiency across wide application ranges
• Integrated ultrafast soft recovery diode specifically optimized for full bridge hard switch converters
• Square Reverse Bias Safe Operating Area (RBSOA) supporting rugged hard switching performance
• Positive VCE(on) temperature coefficient enabling excellent current sharing in parallel operation

Applications

• Welding equipment
• H-Bridge converters
• Full bridge hard switch converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package variant, as IRGP6690DPBF corresponds to the TO-247AC form factor while other suffixes may indicate different packages like TO-247AD. Confirm RoHS compliance status and industrial qualification level requirements prior to integration into designs requiring specific environmental standards.

Selection Notes

Select this component when designing circuits requiring a 600V IGBT with integrated fast recovery diodes for hard-switched topologies. Consider the thermal resistance characteristics and the positive temperature coefficient for paralleling applications. Ensure gate drive voltages align with the specified 15V or 20V operating conditions to optimize switching performance and minimize losses.

Part Context

This part belongs to the IRGP series of insulated gate bipolar transistors from Infineon Technologies (formerly International Rectifier). It represents a discrete power semiconductor solution designed for medium-to-high power switching applications. The product line emphasizes robustness and efficiency through advanced trench gate technology, targeting industrial and consumer power electronics markets.

Replacement Considerations

IRGP6690D-EPBF serves as a direct functional substitute utilizing the TO-247AD package instead of TO-247AC.