IRGPS40B120UDP

Description：IGBT NPT 1200V 80A SUPER-247
Series：-

SKU:4da859a341c4 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 80A SUPER-247
Series：-
Mfr：Infineon Technologies
Package：Bag
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 50A
Power - Max：595 W
Switching Energy：1.4mJ (on), 1.65mJ (off)
Input Type：Standard
Gate Charge：340 nC
Td (on/off) @ 25°C：-
Test Condition：600V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：180 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-274AA
Supplier Device Package：SUPER-247™ (TO-274AA)

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IRGPS40B120UDP

Overview

The IRGPS40B120UDP is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode, utilizing non-punch-through technology. It features a collector-to-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C case temperature. The device offers a typical saturation voltage of 3.12 V at 40 A and 15 V gate drive. It includes 10 µs short-circuit capability and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Non-punch-through IGBT technology for rugged transient performance
Ultrafast soft recovery diode characteristics significantly reducing snubber requirements
Positive VCE(on) temperature coefficient enabling excellent current sharing in parallel operation
Square Reverse Bias Safe Operating Area (RBSOA)

Applications

Motor control systems requiring benchmark efficiency
High-frequency switching applications leveraging ultrasoft diode recovery
Industrial power supplies demanding low electromagnetic interference

Procurement Notes

Verify the specific ordering suffix 'UDP' against official Infineon or International Rectifier documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the Super-247 outline dimensions provided in the datasheet. Confirm RoHS compliance status through the manufacturer's latest product qualification reports before finalizing procurement.

Selection Notes

Select this component for designs requiring high voltage blocking and robust short-circuit withstand capability. The positive temperature coefficient of the saturation voltage facilitates reliable paralleling for higher current applications. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values under varying case temperatures.

Part Context

This part belongs to the family of insulated gate bipolar transistors integrated with anti-parallel diodes. It is designed for industrial markets and utilizes the Super-247 package format. The device combines high-voltage handling with fast switching characteristics suitable for demanding power conversion topologies.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and package footprint to guarantee mechanical and electrical compatibility without redesigning the circuit board.