IRGPS60B120KDP

Overview

The IRGPS60B120KDP is a single NPT IGBT module from Infineon Technologies, rated for 1200V collector-emitter breakdown voltage and 105A continuous DC collector current. It features a maximum gate-to-emitter voltage of ±20V and supports switching frequencies between 5-40kHz. The integrated anti-parallel diode handles 120A continuous forward current at 25°C case temperature. Maximum power dissipation is specified at 595W under the same thermal conditions.

Feature Summary

• NPT technology construction for robust performance
• Integrated fast recovery anti-parallel diode
• High short-circuit capability

Applications

• Induction heating systems
• Motor drive inverters
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm datasheet revisions match application requirements. Check for lead-free compliance markings on physical units. Validate thermal interface material compatibility before installation. Ensure storage conditions prevent moisture damage prior to soldering.

Selection Notes

Consider the 1200V rating for high-voltage isolation needs. Evaluate the 105A current limit against peak load demands. Assess thermal management capabilities given the 595W dissipation specification. Review switching frequency range suitability for target inverter designs. Compare package dimensions with existing PCB layouts.

Part Context

This component belongs to Infineon's IGW series of intelligent power modules. It utilizes NPT (Non-Punch-Through) technology for improved ruggedness. The module integrates an IGBT chip with a fast diode in a single package. This design reduces parasitic inductance compared to discrete solutions.

Replacement Considerations

The part is marked as obsolete. No direct public substitute part numbers are confirmed in available documentation. Engineers should consult official replacement guides or contact manufacturer support for qualified alternatives.