SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGPS66160DPBF is a single silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP series, housed in a TO-274AA-3 (TO-247) through-hole package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 240 A at 25 °C. The device exhibits a collector-emitter saturation voltage of 1.65 V and supports a power dissipation of 750 W. Operating within a temperature range of -40 °C to +175 °C, it utilizes a gate-emitter voltage limit of ±20 V with a leakage current of 400 nA.
Verify component authenticity via official manufacturer channels due to the part's end-of-life status. Confirm RoHS compliance details directly with the supplier. Ensure the TO-274AA-3 package matches the target PCB footprint. Validate that the 240 A current rating aligns with the specific thermal management design of the application.
Select this component for circuits requiring high current capacity and low conduction losses. The 600 V rating suits medium-voltage AC/DC conversion systems. Consider the 750 W power dissipation capability when designing heatsinking solutions. The wide operating temperature range allows for deployment in demanding environmental conditions without derating adjustments.
This IGBT belongs to the TRENCHSTOP family, which integrates advanced trench gate technology to reduce switching losses. The TO-274AA-3 package provides superior thermal conductivity compared to standard TO-220 variants. It serves as a critical switching element in power electronics where efficiency and reliability are paramount.
The datasheet indicates an end-of-life status. Verify if alternative Infineon models within the same TRENCHSTOP series offer compatible pinouts and electrical characteristics before substitution.