IRGR2B60KDPBF

IRGR2B60KDPBF

$0.63
  • Description:IGBT NPT 600V 6.3A TO-252AA
  • Series:-

SKU:6591c2cc8a9b Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT NPT 600V 6.3A TO-252AA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube,Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):6.3 A
  • Current - Collector Pulsed (Icm):8:00 AM
  • Vce(on) (Max) @ Vge, Ic:2.25V @ 15V, 2A
  • Power - Max:35 W
  • Switching Energy:74µJ (on), 39µJ (off)
  • Input Type:Standard
  • Gate Charge:12 nC
  • Td (on/off) @ 25°C:11ns/150ns
  • Test Condition:400V, 2A, 100Ohm, 15V
  • Reverse Recovery Time (trr):68 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252AA (DPAK)

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IRGR2B60KDPBF

Overview

The IRGR2B60KDPbF is a 600V n-channel Insulated Gate Bipolar Transistor with an integrated ultra-fast soft recovery diode, housed in a D-Pak (TO-252AA) package. It features non-punch-through IGBT technology for low VCE(ON) and positive temperature coefficient characteristics. Key electrical parameters include a collector current of 3.7A at TC=100°C, a typical VCE(ON) of 1.95V at IC=2.0A, and a maximum junction temperature of 150°C. The device offers 10µs short-circuit capability and square RBSOA.

Feature Summary

  • Low VCE(ON) achieved through non-punch-through IGBT technology
  • Ultra-soft diode reverse recovery characteristics for reduced EMI
  • Positive VCE(ON) temperature coefficient for safe parallel operation
  • 10µs short-circuit capability with square Reverse Bias Safe Operating Area

Applications

  • Motor control systems requiring benchmark efficiency
  • High-reliability power conversion circuits
  • Applications demanding excellent current sharing in parallel configurations

Procurement Notes

Verify the specific ordering suffix to confirm packaging format, as the base part number corresponds to tube packaging while TR variants indicate tape and reel options. Confirm RoHS compliance status and moisture sensitivity level requirements against your assembly process specifications. Ensure the D-Pak footprint matches your PCB design guidelines provided in application notes.

Selection Notes

Select this component for designs prioritizing low conduction losses and rugged transient performance. The positive temperature coefficient facilitates reliable parallel operation without complex current balancing circuitry. Evaluate thermal resistance values against your heat sinking strategy to ensure junction temperatures remain within the 150°C limit under continuous load conditions.

Part Context

This device belongs to International Rectifier's high-voltage IGBT portfolio, designed for industrial and consumer applications. It integrates a fast diode to simplify half-bridge or full-bridge topologies. The D-Pak package provides a balance of thermal performance and compact surface-mount form factor suitable for automated assembly processes.

Replacement Considerations

Check for pin-compatible alternatives within the same voltage class that offer similar switching speeds. Verify that substitute devices maintain comparable short-circuit withstand times and reverse recovery characteristics to ensure system reliability remains unchanged during transition.

FAQ

What is the short-circuit withstand time for the IRGR2B60KDPbF?

The device supports a short-circuit capability of 10 microseconds at a junction temperature of 150°C.

Does the IGBT exhibit a positive or negative temperature coefficient for VCE(ON)?

The IRGR2B60KDPbF features a positive VCE(ON) temperature coefficient, which aids in current sharing during parallel operation.

What type of package does this component use?

The component is available in the D-Pak (TO-252AA) surface-mount package.

IRGR2B60KDPBFIRGR2B60KDPBF
$0.63
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