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The IRGR4607DPBF is a single n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes trench technology to achieve low saturation voltage and switching losses. The device features a D-Pak (TO-252AA) surface-mount package designed for high thermal efficiency. Key electrical ratings include a collector-to-emitter voltage of 600V, a continuous collector current of 11A at 25°C case temperature, and a maximum power dissipation of 58W. It supports a junction temperature range from -40°C to +175°C.
Verify the specific suffix against the datasheet table to confirm the correct packaging format. The standard part number corresponds to tube packaging, while tape and reel options require distinct ordering codes. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement to ensure compatibility with assembly processes.
Select this component for applications requiring a compact surface-mount IGBT solution with integrated freewheeling diode functionality. Evaluate the thermal resistance characteristics relative to the PCB footprint design to maintain junction temperatures within limits. Ensure the gate drive circuitry accommodates the specified threshold voltage and total gate charge parameters for optimal switching performance.
This device belongs to the IRGx4607 series, which includes variants in different packages such as the IRGS4607D (D2Pak) and IRGB4607D (TO-220AB). All variants share identical internal die specifications and electrical characteristics, differing only in the external mechanical housing and mounting configuration.
Direct pin-compatible replacements within the same family include IRGS4607DPBF and IRGB4607DPBF. Verify that the alternative package type meets the mechanical constraints of the existing printed circuit board layout.
The device is rated for a short-circuit withstand time of 5 microseconds under specified conditions.
The integrated diode features ultrafast soft recovery characteristics to minimize electromagnetic interference and voltage spikes.
The device exhibits a positive temperature coefficient for VCE(on), which promotes balanced current sharing when multiple units are operated in parallel.