IRGS10B60KDPBF

Overview

The IRGS10B60KDPBF is a single Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) non-punch-through IGBT technology and features a TO-220AB through-hole package. The device supports a collector-emitter voltage of 600V, with continuous collector currents of 35A at 25°C and 19A at 100°C. It offers 10μs short-circuit capability, square RBSOA, and positive VCE(on) temperature coefficient for excellent current sharing.

Feature Summary

• Integrates an ultrafast soft recovery diode with ultrasoft reverse recovery characteristics to minimize EMI.
• Features low VCE(on) non-punch-through IGBT technology for benchmark efficiency in motor control applications.
• Provides rugged transient performance with 10μs short-circuit capability and full square Reverse Bias Safe Operating Area (RBSOA).
• Ensures excellent current sharing in parallel operation due to the positive VCE(on) temperature coefficient.

Applications

• Motor control systems requiring high efficiency and rugged transient performance.
• Industrial power supplies and switching mode power supplies (SMPS).
• High-frequency inverters and resonant converters utilizing soft-switching techniques.
• Uninterruptible Power Supplies (UPS) and battery chargers.

Procurement Notes

Verify component authenticity against official Infineon or authorized distributor channels. Confirm lead-free status via assembly line markings. Check datasheet revisions for updated thermal impedance curves. Ensure storage conditions comply with moisture sensitivity levels. Validate package dimensions against TO-220AB specifications before integration.

Selection Notes

Select this component for designs prioritizing low switching losses and reduced electromagnetic interference. Consider the 600V rating and 35A continuous current capacity for medium-power industrial loads. Evaluate thermal management requirements based on the specified junction-to-case resistance. Ensure gate drive voltages remain within the ±20V limit to prevent damage.

Part Context

This part belongs to the IRG/B/S/SL10B60KDPbF family, which includes variants in D2Pak, TO-220AB, and TO-262 packages. It represents Infineon's legacy International Rectifier IGBT portfolio, designed for robust industrial applications. The 'S' suffix denotes the specific TO-220AB package configuration.

Replacement Considerations

Direct pin-compatible substitutes within the same family include IRGB10B60KDPBF (TO-262) and IRGSL10B60KDPBF (D2Pak), provided the mechanical footprint matches. Cross-package replacements require PCB redesign. Verify electrical parameters match if substituting with other manufacturers' 600V IGBTs.

FAQ

What is the short-circuit withstand time for the IRGS10B60KDPBF?

The device has a documented short-circuit capability of 10 microseconds under specified conditions (TJ=150°C, Vp=600V).

Does the integrated diode exhibit hard or soft recovery characteristics?

The integrated diode features ultrasoft reverse recovery characteristics, which help reduce voltage spikes and electromagnetic interference during switching.

How does the VCE(on) behave with temperature changes?

The IGBT exhibits a positive VCE(on) temperature coefficient, which facilitates stable parallel operation and prevents thermal runaway when multiple devices are used.