IRGS10B60KDTRRP

Overview

The IRGS10B60KDTRRP is a surface-mount Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes non-punch-through IGBT technology to achieve low on-state voltage drop and features ultrasoft reverse recovery characteristics for reduced electromagnetic interference. The device supports a collector-to-emitter voltage of 600 V and offers a continuous collector current of 35 A at 25°C case temperature. It provides a short-circuit capability of 10 μs and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Non-punch-through IGBT technology ensures low on-state voltage drop and positive temperature coefficient for safe parallel operation.
• Integrated ultrafast soft recovery diode minimizes reverse recovery energy and associated switching losses.
• Robust square Reverse Bias Safe Operating Area (RBSOA) and 10 μs short-circuit withstand capability enhance transient performance.

Applications

• Motor control inverters
• High-efficiency power conversion systems
• Industrial motor drives

Procurement Notes

Verify the specific ordering suffix TRRP against official documentation to confirm tape-and-reel packaging and lead-free status. Ensure the component matches the exact datasheet revision referenced in this document. Confirm that the manufacturer designation aligns with Infineon Technologies or its predecessor International Rectifier specifications.

Selection Notes

Select this component for applications requiring rugged transient performance and low EMI generation. The positive temperature coefficient of the saturation voltage facilitates excellent current sharing when multiple devices are operated in parallel. Consider the thermal resistance values and available cooling options to maintain junction temperatures within the specified operating limits during high-current pulses.

Part Context

This device belongs to the IRG/B/S/SL10B60KDPbF family, which includes variants in TO-220AB, D2PAK, and TO-262 packages. The IRGS10B60KDTRRP specifically denotes the D2PAK surface-mount configuration. The family shares identical electrical characteristics and pinouts, differing primarily in physical package dimensions and mounting methods.

Replacement Considerations

Direct substitutes within the same electrical specification include IRGB10B60KDPbF (TO-262 package) and IRGS10B60KDPbF (D2PAK package). Verify pin compatibility and thermal management requirements when transitioning between package types.

FAQ

What is the maximum short-circuit withstand time for this IGBT?

The device has a confirmed short-circuit safe operating area (SCSOA) capability of 10 microseconds at a junction temperature of 150°C.

Does the integrated diode exhibit hard or soft recovery characteristics?

The integrated antiparallel diode features ultrasoft reverse recovery characteristics, designed to minimize electromagnetic interference and switching losses.

How does the saturation voltage behave with temperature changes?

The IGBT exhibits a positive temperature coefficient for VCE(on), which promotes stable current sharing when multiple units are connected in parallel.