SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGS15B60KDTRRP is a single NPT IGBT manufactured by International Rectifier, now part of Infineon Technologies. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current of 31 A. The device is rated for a maximum power dissipation of 208 W and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 56 nC and a reverse recovery time of 92 ns. It is available in surface-mount TO-263-3 (D²Pak) packages.
Verify the manufacturer origin carefully, as this component is associated with both International Rectifier and Infineon Technologies due to corporate acquisition history. Confirm the specific package variant, as sources indicate potential confusion between TO-247-3 and TO-263-3 configurations. Ensure the ordering suffix matches the required lead frame and tape-and-reel specifications for automated assembly processes.
Select this component when a 600 V rating and 31 A current capacity are required for surface-mount applications. The NPT technology offers advantages in high-temperature stability compared to punch-through designs. Consider the 56 nC gate charge for drive circuit sizing and verify that the 208 W power dissipation rating aligns with the intended thermal solution and ambient operating conditions.
This IGBT belongs to the standard single transistor category from International Rectifier's portfolio. It represents a legacy product line now managed under Infineon Technologies' industrial power solutions division. The device is designed for general-purpose medium-power switching applications requiring robust voltage handling and reliable thermal performance in compact form factors.
Public confirmed substitute part numbers are not explicitly documented in the provided source material. Cross-reference with other 600V 31A NPT IGBTs in TO-263 packages only if official datasheet compatibility is verified.