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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IRGS15B60KPBF is a 600 V, 15 A IGBT module from Infineon's IKW series. It integrates an N-channel IGBT with a fast recovery anti-parallel diode in a single package. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V at 15 A and a forward voltage of 2.4 V for the diode at 15 A. The device features a maximum switching frequency range of 4 kHz to 30 kHz and operates within a junction temperature range of -40 °C to +175 °C. It utilizes a standard three-terminal TO-247-3L plastic package.
Feature Summary
- Integrated fast recovery anti-parallel diode for simplified circuit design
- Optimized low saturation voltage for improved conduction efficiency
- Robust thermal performance suitable for high-power applications
Applications
- Motor drives and servo amplifiers
- Switched-mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix 'PBF' indicates lead-free compliance when sourcing. Confirm the package type matches the TO-247-3L specification required by the target PCB footprint. Ensure the operating voltage does not exceed the 600 V rating under all transient conditions.
Selection Notes
Select this component for designs requiring moderate current handling up to 15 A at 600 V. Consider the thermal resistance characteristics for heatsink sizing. Compare against other IKW series variants if higher current density or different packaging is needed.
Part Context
This part belongs to Infineon's IKW series of insulated gate bipolar transistors. The series is designed for general-purpose power switching applications. It represents a balance between switching speed and conduction losses typical of hard-switching IGBT technologies.
Replacement Considerations
Direct substitutes may include other 600 V, 15 A IGBTs in TO-247 packages from various manufacturers. Verify pinout compatibility and electrical parameter equivalence before substitution. Check for any differences in switching characteristics that might affect snubber requirements.
