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The Infineon IRGS30B60KTRRP is a surface-mount Insulated Gate Bipolar Transistor (IGBT) in the D2Pak (TO-262) package. It utilizes Non Punch Through technology with a maximum collector-emitter voltage of 600V and a continuous collector current of 78A at 25°C case temperature. The device features a typical on-state voltage of 1.95V at 30A and supports a junction temperature up to 175°C. It includes 10µs short-circuit capability, square Reverse Bias Safe Operating Area (RBSOA), and positive VCE(on) temperature coefficient for parallel operation.
Verify the exact suffix TRRP against official documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status as indicated by PbF markings. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under steady-state conditions.
Select this component for applications requiring high ruggedness and efficient motor control. The positive temperature coefficient facilitates safe parallel operation. Evaluate switching losses against gate drive resistance requirements. Ensure the operating junction temperature remains within the rated 175°C limit during peak load conditions.
This part belongs to the IRGB/S/SL30B60KPbF family from Infineon Technologies. It shares core electrical characteristics with through-hole variants like the IRGB30B60KPbF but differs in physical mounting configuration. The D2Pak package is optimized for surface mount assembly on printed circuit boards.
Direct pin-compatible replacements include other D2Pak packaged IGBTs from the same manufacturer family with matching 600V ratings and similar current capabilities. Verify thermal resistance and switching speed parameters before substitution.
The device is rated for a short-circuit time of 10 microseconds.
Yes, it features a positive VCE(on) temperature coefficient which ensures excellent current sharing in parallel configurations.
The maximum operating junction temperature is rated at 175°C.