IRGS4064DTRRPBF

Description：IGBT TRENCH 600V 20A D2PAK
Series：-

SKU:296f67f5abc8 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 20A D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：40 A
Vce(on) (Max) @ Vge, Ic：1.91V @ 15V, 10A
Power - Max：101 W
Switching Energy：29µJ (on), 200µJ (off)
Input Type：Standard
Gate Charge：32 nC
Td (on/off) @ 25°C：27ns/79ns
Test Condition：400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr)：62 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRGS4064DTRRPBF

Overview

The IRGS4064DTRRPBF is a Trench IGBT with an ultrafast soft recovery diode in a D2PAK package. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 20 A at 25°C case temperature. The device exhibits a typical saturation voltage of 1.9 V at 10 A and 25°C, rising to 2.0 V at 175°C. Total switching loss reaches 313 μJ at 25°C and 415 μJ at 175°C under specified test conditions. Maximum power dissipation is 101 W at 25°C. The junction-to-case thermal resistance is 1.49 °C/W for the IGBT.

Feature Summary

Utilizes low VCE(on) Trench IGBT technology for reduced conduction losses.
Integrates an ultrafast soft recovery co-packaged diode to minimize reverse recovery effects.
Provides a square Reverse Bias Safe Operating Area (RBSOA) for robust transient performance.
Features a positive VCE(on) temperature coefficient to facilitate reliable parallel operation.

Applications

Uninterruptible Power Supplies (UPS)
Industrial motor drives
Welding equipment

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm lead-free status and tape-and-reel packaging configuration. Ensure the component matches the exact part number required for your design specifications. Cross-reference datasheet revisions to confirm electrical characteristics remain consistent with your application requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring high efficiency across wide operating ranges due to low switching losses. The positive temperature coefficient supports stable current sharing when paralleling devices. Verify that the thermal management solution can handle the maximum power dissipation and junction temperature limits defined in the absolute maximum ratings section of the datasheet.

Part Context

This component belongs to the IRGS series of insulated gate bipolar transistors from Infineon Technologies. It combines a Trench IGBT die with a complementary ultrafast diode in a single surface-mount package. The series is designed for industrial markets, offering rugged transient performance and optimized switching characteristics for medium-power conversion applications.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet specifications.