IRGS4607DTRRPBF

Overview

The IRGS4607DTRRPBF is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes trench technology to achieve low saturation voltage and switching losses. The device features a D2-Pak (TO-263AB) surface-mount package and supports a maximum junction temperature of 175°C. Key electrical parameters include a continuous collector current of 11A at 25°C case temperature, a collector-emitter saturation voltage of 2.2V at 4.0A, and a total power dissipation of 58W at 25°C.

Feature Summary

• Integrates an ultrafast soft recovery diode for high efficiency in wide application ranges.
• Features a 5µs short circuit safe operating area (SOA) for rugged transient performance.
• Provides a square reverse bias safe operating area (RBSOA) for robust operation.
• Exhibits a positive VCE(ON) temperature coefficient to ensure excellent current sharing in parallel configurations.

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters
• Welding equipment

Procurement Notes

Verify the specific ordering suffix 'RR' corresponds to the Tape and Reel Right configuration as documented in the manufacturer's standard pack table. Confirm that the component retains lead-free status and RoHS compliance. Ensure the procurement source provides original manufacturer documentation to validate the part number against the base IRGS4607DPbF specification sheet.

Selection Notes

Select this component for applications requiring high reliability and efficient thermal management within a surface-mount form factor. The 175°C maximum junction temperature rating allows for higher thermal margins compared to standard 150°C devices. The integrated soft recovery diode reduces electromagnetic interference and stress on the IGBT during commutation, making it suitable for resonant or hard-switched topologies.

Part Context

This part belongs to the IRGR/S/B4607DPbF family from International Rectifier, now part of Infineon Technologies. The family includes variants in D-Pak (IRGR), D2-Pak (IRGS), and TO-220AB (IRGB) packages. All variants share identical electrical characteristics and are designed for 600V trench IGBT applications. The IRGS variant specifically targets surface-mount assembly requirements while maintaining the performance profile of the series.

Replacement Considerations

Direct replacements within the same family include IRGS4607DTRLPBF (Tape and Reel Left). Cross-package equivalents with identical electrical ratings are IRGR4607DTRRPBF (D-Pak) and IRGB4607DPbF (TO-220AB). Verify pinout compatibility and thermal resistance differences when substituting across different package types.

FAQ

What is the short circuit withstand time for the IRGS4607DTRRPBF?

The device has a specified short circuit safe operating area (SOA) of 5 microseconds at a junction temperature of 175°C and a collector-emitter voltage up to 600V.

Does the IRGS4607DTRRPBF have a positive temperature coefficient?

Yes, the IGBT exhibits a positive VCE(ON) temperature coefficient, which facilitates stable current sharing when multiple devices are operated in parallel.

What type of diode is integrated with the IGBT in this component?

The component integrates an ultrafast soft recovery diode, which helps minimize reverse recovery energy and peak reverse recovery current during switching transitions.