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The IRGS4715DPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features a 650V collector-emitter voltage rating and a continuous collector current of 21A. The device utilizes a D2PAK surface-mount package. Key electrical parameters include a maximum power dissipation of 100W and a reverse recovery time of 86ns under specified test conditions. The operating junction temperature range extends from -40°C to 175°C.
Verify the manufacturer status carefully as this component is listed as obsolete in major distributor catalogs. Confirm availability through secondary market channels or authorized stockists if production continuity is required. Ensure the specific suffix DPBF matches the required lead-free and tape-and-reel specifications for your manufacturing process.
Select this IGBT when a 650V rating and 21A continuous current are sufficient for the load requirements. Consider the 100W power dissipation limit and thermal management needs associated with the D2PAK package. Evaluate the 86ns reverse recovery time against the switching frequency demands of the target application circuit.
This component belongs to the UltraFast IGBT family from International Rectifier, designed for efficient power conversion. The product line emphasizes fast switching speeds to reduce losses in high-power electronic systems. Integration into Infineon's portfolio continues the lineage of these specialized power semiconductor devices.
Public confirmed substitute part numbers are not available in the provided documentation due to the obsolete lifecycle status. Engineers should consult official cross-reference guides or contact the manufacturer directly for validated replacement options.