SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGS4B60KD1TRRP is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies under the TRENCHSTOP RC series. It utilizes Silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 12 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 63 W. It operates within a temperature range of -55°C to +175°C.
Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm RoHS compliance details and check for valid replacement part numbers such as IKB06N60TATMA1 if sourcing new inventory is required. Ensure storage conditions meet moisture sensitivity level requirements prior to assembly.
Select this component for applications requiring a 600V rated single IGBT in a surface-mount D2PAK package. Consider the 12A continuous current rating and 63W power dissipation capabilities against thermal management constraints. Verify that the 2.1V saturation voltage meets efficiency targets for the specific load conditions.
This part belongs to the Infineon TRENCHSTOP RC series of IGBTs, which are designed for general-purpose switching applications. The IRGS4B60KD1TRRP is a specific variant within the IRGS4B family, distinguished by its tape-and-reel packaging format compared to tube-packaged equivalents like the IRGS4B60KD1PBF.
Publicly confirmed substitute part numbers include IKB06N60TATMA1 and IKB10N60TATMA1 from Infineon. When replacing, verify pin compatibility and thermal resistance differences between the D2PAK and alternative packages. Consult official datasheets for parameter deviations before implementation.