IRGS4B60KPBF

Description：IGBT NPT 600V 12A D2PAK
Series：-

SKU:978e255784a6 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 12A D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：12:00 AM
Current - Collector Pulsed (Icm)：24 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 4A
Power - Max：63 W
Switching Energy：73µJ (on), 47µJ (off)
Input Type：Standard
Gate Charge：12 nC
Td (on/off) @ 25°C：22ns/100ns
Test Condition：400V, 4A, 100Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRGS4B60KPBF

Overview

The IRGS4B60KPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 12 A at 25 °C. The device utilizes the TRENCHSTOP technology within the RC series, packaged in a D2PAK-3 (TO-263-3) surface-mount configuration. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.1 V and a power dissipation capacity of 63 W. The component operates across a temperature range from -55 °C to +175 °C junction temperature.

Feature Summary

Incorporates TRENCHSTOP technology for optimized switching performance
Designed with low on-state voltage characteristics
Utilizes a robust D2PAK-3 surface-mount package

Applications

High-frequency power conversion circuits
Motor drive inverters
Uninterruptible power supply systems

Procurement Notes

Verify the exact suffix against official documentation, as variations such as PBF or TRRP indicate specific packaging or compliance differences. Confirm availability status directly with the manufacturer, as this component may be subject to discontinuation or lifecycle changes. Ensure that the selected variant matches the required thermal and electrical specifications for the intended application design.

Selection Notes

Select this component based on its 600 V blocking capability and 12 A current handling suitable for medium-power applications. Consider the D2PAK-3 package for efficient heat dissipation in surface-mount designs. Evaluate the trade-off between the 2.1 V saturation voltage and switching losses inherent to the TRENCHSTOP architecture when designing the gate drive circuitry.

Part Context

This IGBT belongs to Infineon's RC series, which focuses on high-speed switching capabilities. The TRENCHSTOP family integrates advanced trench gate technology to reduce switching energy losses compared to standard planar devices. This specific part represents a discrete solution for applications requiring reliable high-voltage switching in a compact form factor.