SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGS6B60KDPBF is a single-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes Non Punch Through (NPT) technology to achieve low saturation voltage and features a D2PAK surface-mount package. The device supports a collector-emitter voltage of 600V and a continuous collector current of 18A at 25°C case temperature. It offers a short-circuit capability exceeding 10μs and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'PBF' indicates lead-free compliance during procurement. Confirm the D2PAK footprint compatibility with your PCB design. Ensure thermal management meets the specified junction-to-case resistance limits. Check for obsolescence status as this component originates from International Rectifier history.
Select this component when a rugged NPT IGBT with integrated diode is required for medium-power applications. Consider the 600V rating and 18A continuous current capacity against your load requirements. Evaluate the D2PAK package for surface-mount assembly constraints. Verify that the 10μs short-circuit tolerance aligns with your protection circuitry timing.
This part belongs to the IRGB/S/SL6B60KDPbF family, which includes variants in TO-220AB and TO-262 packages. The 'S' suffix denotes the D2PAK surface-mount configuration. Originally developed by International Rectifier, the product line was acquired by Infineon Technologies. The datasheet specifies industrial market qualification standards.
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other members of the IRGB/S/SL6B60KDPbF family if package changes are acceptable.