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Product Detailed Parameters
- Description：IGBT 600V 13A TO263-3-901
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：26 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 5A
- Power - Max：90 W
- Switching Energy：110µJ (on), 135µJ (off)
- Input Type：Standard
- Gate Charge：18.2 nC
- Td (on/off) @ 25°C：25ns/215ns
- Test Condition：400V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3-901
- Grade：-
- Qualification：-
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Overview
The IRGS6B60KPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 12A at 25°C. The device utilizes a channel-thin wafer technology to optimize switching performance, achieving a typical turn-off time of 89ns. It is housed in a D2PAK surface-mount package with three terminals. The component supports a maximum junction temperature of 175°C and includes an integrated ultrafast soft recovery diode.
Feature Summary
- Integrated ultrafast soft recovery diode for optimized commutation
- Channel-thin wafer technology for reduced switching losses
- Positive temperature coefficient for stable parallel operation
Applications
- High-frequency motor drives
- Uninterruptible power supplies (UPS)
- Industrial welding equipment
Procurement Notes
Verify the specific suffix 'PBF' against the manufacturer's official documentation to confirm lead-free compliance status. Ensure the ordering part number matches the exact electrical specifications required for the target circuit design before procurement.
Selection Notes
Select this component for applications requiring high-speed switching within a 600V system. The D2PAK package is suitable for surface-mount assembly where thermal management can be addressed through PCB copper area optimization. Verify gate drive requirements align with the specified threshold voltages.
Part Context
This IGBT belongs to the IRGS series from International Rectifier, which focuses on high-performance discrete power devices. The series is characterized by the integration of fast recovery diodes and advanced wafer technologies designed for efficiency in medium-power conversion systems.
Replacement Considerations
Consult official cross-reference lists for direct replacements. When evaluating alternatives, ensure the substitute maintains compatible voltage ratings, current capabilities, and package dimensions to fit existing board layouts without modification.
