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The IRGS8B60KTRLPBF is a single N-channel Insulated Gate Bipolar Transistor manufactured by Infineon Technologies. It utilizes Non Punch Through IGBT technology and features a TO-220AB package with through-hole mounting. The device supports a collector-emitter voltage of 600V and a continuous collector current of 28A at 25°C case temperature. It offers a typical saturation voltage of 1.8V and provides 10µs short-circuit capability.
Verify the specific suffix 'TRL' against official documentation to confirm reel packaging specifications, as datasheets may list standard tube variants. Confirm RoHS compliance status for the exact ordering code. Ensure the component matches the original International Rectifier or Infineon specification sheet before integration into designs.
Select this component for applications requiring rugged transient performance and low EMI generation. The positive temperature coefficient facilitates excellent current sharing in parallel operation. Evaluate thermal management requirements based on the junction-to-case thermal resistance and power dissipation limits under steady-state conditions.
This part belongs to the IRGB/S/SL8B60K family of 600V IGBTs from Infineon (formerly International Rectifier). The 'S' designation indicates the TO-220AB package form factor. These devices are designed for industrial market qualification and offer benchmark efficiency for motor control applications compared to older generation technologies.
Consult official cross-reference lists for verified substitutes such as other IRGB/S/SL8B60K variants with different packaging suffixes. Ensure any replacement maintains the 600V rating, 28A current capacity, and compatible gate threshold voltage characteristics.