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The IRGSL6B60KDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, formerly International Rectifier. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 6 A at 25 °C. The device utilizes a TO-220FP-3 through-hole package with a maximum power dissipation of 18 W. Key electrical parameters include a saturation voltage of 2.4 V and a gate-emitter voltage range of ±20 V. It operates within a temperature range of -55 °C to +175 °C junction temperature.
Verify the manufacturer status as Infineon Technologies, as International Rectifier was acquired. Confirm the specific suffix 'PBF' indicates lead-free compliance and RoHS adherence. Check for end-of-life notifications or discontinuation notices from official Infineon channels before finalizing procurement plans.
Select this component for applications requiring a 600V rating with moderate current handling up to 6A. The integrated diode simplifies circuit topology by eliminating the need for external freewheeling diodes in inductive loads. Ensure the thermal management solution supports the 18W dissipation limit in the TO-220FP-3 package.
This part belongs to the IRGSL series of IGBTs, designed for general-purpose switching applications. It represents the legacy International Rectifier product line now managed under Infineon Technologies. The TO-220FP-3 package provides a balance between thermal conductivity and mounting convenience for medium-power electronics.
Consult official Infineon documentation for direct pin-compatible replacements within the same voltage and current class. Verify that any substitute maintains the same soft-recovery diode characteristics to prevent voltage spikes during switching.