IRL620STRLPBF

$2.44

Description：MOSFET N-CH 200V 5.2A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b29de996b738 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRL620STRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 5.2A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRL620STRLPBF

Description：MOSFET N-CH 200V 5.2A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRL620STRLPBF

IRL620STRLPBF

Single FETs, MOSFETs Overview

The Vishay Siliconix IRL620STRLPBF is a third-generation N-channel power MOSFET housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 200 V and a continuous drain current of 5.2 A at 25 °C case temperature. The device offers a maximum on-resistance of 0.80 Ω at VGS = 10 V and 1.0 Ω at VGS = 4 V. Key dynamic parameters include a total gate charge of 16 nC, input capacitance of 360 pF, and turn-on delay time of 4.2 ns. It supports repetitive avalanche energy up to 125 mJ and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Logic level gate drive capability with RDS(on) specified at VGS = 4 V and 5 V for direct microcontroller interfacing.
Repetitive avalanche rated for robust performance in inductive switching applications.
Dynamic dV/dt rating ensures stability during fast switching transitions.
D2PAK (TO-63) package provides high power dissipation and low internal connection resistance.

Single FETs, MOSFETs Applications

High-current DC-DC converter circuits
Motor control systems requiring logic-level drive
Power management modules utilizing repetitive avalanche conditions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and tape-and-reel packaging configuration. Ensure the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability. Cross-reference the document revision date with the physical marking on the device to align with the latest technical specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V N-channel MOSFET with logic-level gate drive is required in a surface-mount format. The D2PAK package is suitable for applications needing higher current handling than standard SMD packages. Verify that the thermal design accommodates the specified power dissipation limits under the intended operating ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IRF620S series of third-generation power MOSFETs from Vishay Siliconix. It shares core electrical characteristics with through-hole variants like the IRF620PBF but utilizes the D2PAK (TO-263) surface-mount package. The 'STR' suffix indicates availability in tape-and-reel packaging for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same series include the SiHL620STRL-GE3. Other Vishay devices sharing identical electrical ratings and package dimensions may serve as functional substitutes if verified against the datasheet.