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IRL8114PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IRL8114 - 12V-300V N-CHANNEL POW. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRL8114PBF
- Description：IRL8114 - 12V-300V N-CHANNEL POW
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2660 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：115W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IRL8114PBF
Single FETs, MOSFETs Overview
The IRL8114PBF is a single N-channel HEXFET power MOSFET housed in a TO-220AB through-hole package. It supports a maximum drain-source voltage of 30V and delivers a continuous drain current of 120A at 25°C. The device features a maximum total power dissipation of 115W and a junction temperature rating of 175°C. On-resistance is specified at a maximum of 4.5mΩ at 10V gate drive and 5.8mΩ at 4.5V. Key switching parameters include a gate charge of 19nC at 4.5V and a gate-drain charge of 6.7nC.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced HEXFET technology to achieve low on-resistance for efficient power conduction.
- Designed with enhanced avalanche capability to withstand repetitive avalanche conditions.
- Features fast switching characteristics supported by optimized internal gate charge parameters.
Single FETs, MOSFETs Applications
- DC motor control systems
- Power conversion circuits
- Synchronous rectification applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix PBF to confirm lead-free compliance status. Ensure the component matches the TO-220AB physical footprint for proper thermal management. Cross-reference the manufacturer datasheet for the latest product qualification reports and reliability data before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage, high-current solution is required for through-hole assembly. The 30V rating suits low-side switching or synchronous rectification where minimal conduction loss is critical. Evaluate the thermal resistance and heat sink requirements based on the 115W power dissipation limit under expected operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon IRL8114 series of single N-channel power MOSFETs. It is manufactured using planar strip technology to maximize performance within the industry-standard TO-220AB package. The series is engineered for general-purpose power switching applications requiring robust current handling capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.
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