IRLB3034PBFXKMA1

Single FETs, MOSFETs Overview

The IRLB3034PBFXKMA1 is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes the StrongIRFET technology and is housed in a TO-220AB through-hole package. The device features a drain-to-source breakdown voltage of 40V and a continuous drain current rating of 343A at a case temperature of 25°C, limited by silicon characteristics. The maximum power dissipation is rated at 375W under the same thermal conditions. Key electrical parameters include a typical on-resistance of 1.4mΩ and a maximum of 1.7mΩ at VGS=10V. The total gate charge is typically 108nC.

Single FETs, MOSFETs Feature Summary

• Optimized for logic level drive with very low on-resistance at 4.5V gate-to-source voltage.
• Features superior RDS(on) multiplied by gate charge performance at 4.5V VGS.
• Includes improved ruggedness characteristics regarding gate handling, avalanche capability, and dynamic dv/dt.
• Enhanced body diode capabilities providing improved reverse recovery dv/dt and di/dt performance.

Single FETs, MOSFETs Applications

• DC motor drive systems
• High efficiency synchronous rectification in switch-mode power supplies (SMPS)
• Uninterruptible power supply (UPS) circuits
• High speed power switching applications

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix 'XKMA1' corresponds to the specific tape-and-reel packaging variant rather than the standard tube configuration found in generic datasheets. Confirm RoHS compliance status and lead-free designation as indicated by the PbF marking in official documentation. Ensure the component meets industrial market qualification standards prior to integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling up to 343A and low conduction losses at 40V. Consider the package-limited current of 195A when designing for ambient cooling without active heatsinking. Evaluate the thermal resistance from junction to case (0.4°C/W) to determine appropriate heat sink requirements for sustained operation near maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET family of power MOSFETs from Infineon Technologies, formerly International Rectifier. It is designed for industrial applications requiring robust performance in hard-switched and high-frequency circuits. The TO-220AB package provides a reliable mechanical interface for through-hole mounting in power electronics assemblies.

Single FETs, MOSFETs Replacement Considerations

The IRLB3034PbF is the direct equivalent part number listed in the datasheet. Verify pinout compatibility and thermal characteristics when substituting with other 40V N-channel MOSFETs in the TO-220AB package.