IRLHS6376TR2PBF

$0.65

Description：MOSFET 2N-CH 30V 3.6A 6PQFN
Series：-

SKU:c4bc579f1e7d Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRLHS6376TR2PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 3.6A 6PQFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRLHS6376TR2PBF

Description：MOSFET 2N-CH 30V 3.6A 6PQFN
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.6A
Rds On (Max) @ Id, Vgs：63mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：270pF @ 25V
Power - Max：1.5W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：6-VDFN Exposed Pad
Supplier Device Package：6-PQFN (2x2)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRLHS6376TR2PBF

IRLHS6376TR2PBF

FET, MOSFET Arrays Overview

Infineon IRLHS6376TR2PBF is a dual N-channel HEXFET power MOSFET in a PQFN Dual 2mm x 2mm package. It features a drain-source voltage of 30 V and gate-source voltage of ±12 V. The maximum on-resistance is 63 mΩ at VGS = 4.5V and 82 mΩ at VGS = 2.5V. Continuous drain current reaches 7.6 A at TC(Bottom) = 25°C (package limited). Total gate charge is typically 2.8 nC at VGS = 4.5V. Operating junction temperature ranges from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

Dual channel configuration within a compact 2mm x 2mm footprint for high power density
Logic level gate drive compatibility with low threshold voltage range
Low thermal resistance to PCB enabling efficient heat dissipation
Industry-standard pinout supporting multi-vendor design flexibility

FET, MOSFET Arrays Applications

Low voltage synchronous rectification
DC-DC converter output stages
Power management integrated circuits (PMICs)
Battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the ordering suffix TR2PBF indicates a mini-reel quantity of 400 units, which differs from the standard tape and reel packaging. Confirm availability status as the datasheet revision history notes an End-of-Life notice for this specific mini-reel option. Ensure component authenticity through authorized distribution channels.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel switching in minimal space. Evaluate thermal performance based on the specified junction-to-ambient resistance values. Consider the logic-level gate drive requirements when designing control circuitry. Verify that the 30 V breakdown voltage aligns with system operating conditions.

FET, MOSFET Arrays Part Context

The IRLHS6376 series belongs to Infineon's HEXFET family, utilizing planar trench technology. This specific part number represents a dual configuration variant designed for surface mount assembly. The PQFN package provides enhanced thermal performance compared to traditional plastic packages while maintaining a low profile suitable for modern electronics manufacturing.