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IRLML2402GTRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 1.2A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRLML2402GTRPBF
- Description：MOSFET N-CH 20V 1.2A SOT23-3
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
- Rds On (Max) @ Id, Vgs：250mOhm @ 930mA, 4.5V
- Vgs(th) (Max) @ Id：700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：3.9 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：110 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：540mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Micro3™/SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for IRLML2402GTRPBF
Single FETs, MOSFETs Overview
The IRLML2402GTRPBF is an N-channel enhancement mode MOSFET from the Infineon HEXFET series. It features a maximum drain-source voltage of 20 V and a continuous drain current of 1.2 A. The device utilizes a Micro6 surface-mount package with three pins, measuring 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height. Key electrical parameters include a maximum on-resistance of 350 mΩ and a typical gate charge of 2.6 nC at 4.5 V. It operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode structure for low-side switching applications
- Micro6 surface-mount package optimized for compact PCB layouts
- HEXFET technology providing high switching performance
Single FETs, MOSFETs Applications
- Low-voltage load switching
- Battery protection circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm package integrity upon receipt as the Micro6 form factor is sensitive to mechanical stress. Ensure storage conditions align with manufacturer specifications to maintain reliability. Cross-reference datasheet revisions to confirm parameter consistency before integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring small footprint and moderate current handling. The 20 V rating suits single-cell lithium battery systems. Compare on-resistance values against thermal constraints. Verify gate drive compatibility with the specified threshold voltages. Consider the Micro6 package dimensions during layout planning.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon HEXFET family, designed for general-purpose power switching. The Micro6 package offers a smaller footprint compared to traditional SOT-23 variants, facilitating higher density designs. It serves as a modern alternative for space-constrained portable electronics and consumer devices requiring efficient N-channel control.
Single FETs, MOSFETs FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150 °C.
Does this device support high-side switching without a charge pump?
No, this is an N-channel MOSFET typically used for low-side switching. High-side switching usually requires a P-channel device or a driver circuit.
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