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IRLU7843-701PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 161A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRLU7843-701PBF
- Description：MOSFET N-CH 30V 161A IPAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：161A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4380 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：140W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：I-PAK (LF701)
- Package / Case：TO-252-4, DPAK (3 Leads + Tab)
Single FETs, MOSFETs datasheet and documents for IRLU7843-701PBF
Single FETs, MOSFETs Overview
The IRLU7843-701PBF is an N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 30V drain-to-source voltage rating and a maximum continuous drain current of 161A at 25°C case temperature. The device exhibits a typical static drain-to-source on-resistance of 2.6mΩ, with a maximum of 3.3mΩ at VGS=10V. Total gate charge is typically 34nC at 4.5V. The component utilizes an IPAK (TO-251) package for through-hole mounting.
Single FETs, MOSFETs Feature Summary
- Ultra-low gate impedance facilitates high-frequency switching applications
- Fully characterized avalanche voltage and current capabilities
- Low RDS(on) performance at 4.5V gate-to-source voltage
Single FETs, MOSFETs Applications
- High frequency synchronous buck converters for computer processor power
- High frequency isolated DC-DC converters with synchronous rectification for telecom use
- High frequency isolated DC-DC converters with synchronous rectification for industrial use
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-701' against official Infineon documentation to confirm tape-and-reel packaging or other variations. Confirm lead-free status and RoHS compliance requirements. Check datasheet revision dates as specifications are subject to change without notice. Ensure thermal management aligns with junction-to-case resistance limits.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses in high-current environments. Evaluate thermal dissipation capabilities based on the specified junction-to-ambient resistance values. Consider the gate threshold voltage range when designing drive circuits to ensure reliable turn-on characteristics under varying load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed for efficient power switching in demanding electronic applications. The IPAK package provides robust mechanical stability for through-hole PCB implementations compared to surface-mount alternatives.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Verify pinout compatibility and electrical parameter alignment before implementation.
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