ISA220280C03LMDSXTMA1

$0.77

Description：ISA220280C03LMDSXTMA1
Series：OptiMOS™ 3

SKU:58dbdd129326 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

ISA220280C03LMDSXTMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is ISA220280C03LMDSXTMA1. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for ISA220280C03LMDSXTMA1

Description：ISA220280C03LMDSXTMA1
Series：OptiMOS™ 3
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Rds On (Max) @ Id, Vgs：22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id：2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：13.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 15V
Power - Max：1.4W (Ta), 2.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：PG-DSO-8-920
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for ISA220280C03LMDSXTMA1

ISA220280C03LMDSXTMA1

FET, MOSFET Arrays Overview

The ISA220280C03LMDS is a complementary OptiMOS™ 3 power-transistor featuring integrated N-channel and P-channel MOSFETs in a PG-DSO-8 package. The N-channel device provides a maximum drain-source voltage of 30 V, a continuous drain current of 8.4 A at 25°C, and a maximum on-resistance of 22 mΩ. The P-channel counterpart offers a breakdown voltage of -30 V, a continuous drain current of -8.1 A, and an on-resistance of 28 mΩ. Both channels operate within a temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

Complementary N- and P-channel integration
Very low on-resistance
Superior thermal resistance
100% avalanche tested

FET, MOSFET Arrays Applications

Motor drive solutions
Power switching applications
Low-side and high-side control circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance and halogen-free status as stated in the datasheet. Ensure the component matches the exact PG-DSO-8 marking code for proper identification during assembly.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring matched N- and P-channel performance in a compact footprint. Consider the thermal resistance values when designing heat dissipation strategies. Verify gate threshold voltage compatibility with the intended logic levels for reliable switching operation.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS™ 3 family of power transistors designed for efficiency and reliability. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The PG-DSO-8 package provides robust thermal performance suitable for surface-mount applications.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains identical pinout configuration and electrical ratings to guarantee circuit compatibility without redesign.