ISA250300C04LMDSXTMA1

FET, MOSFET Arrays Overview

The ISA250300C04LMDSXTMA1 is an OptiMOS™ 3 complementary dual power MOSFET in a PG-DSO-8 package. It integrates N-channel and P-channel transistors with V_DS ratings of 40 V and -40 V respectively. The N-channel offers R_DS(on) max of 25 mΩ at V_GS=10V and I_D max of 7.9 A. The P-channel provides R_DS(on) max of 30 mΩ at V_GS=-10V and I_D max of -7.8 A. Operating temperature range is -55 °C to 150 °C.

FET, MOSFET Arrays Feature Summary

• Complementary N- and P-channel integration within a single package
• Very low on-resistance for high efficiency
• Superior thermal resistance characteristics
• 100% avalanche tested for reliability

FET, MOSFET Arrays Applications

• High-side and low-side switching applications
• Power management circuits requiring compact footprint
• Motor drive interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Cross-reference the final datasheet revision 2.0 for accurate electrical parameters before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring both N-type and P-type switching capabilities in a minimal space. The logic-level gate threshold voltage allows direct interfacing with standard logic outputs. Evaluate thermal dissipation requirements based on the specified junction-to-ambient thermal resistance values under your specific PCB layout conditions.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS™ 3 family of power transistors, designed for general-purpose switching applications. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The PG-DSO-8 package provides a robust solution for surface-mount assembly while maintaining high current handling capabilities.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configuration, voltage ratings, and thermal performance characteristics to guarantee circuit compatibility without redesign.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the N-channel?

The maximum continuous drain current (I_D) for the N-channel is 7.9 A at T_C = 25°C.

Is the device qualified according to JEDEC standards?

Yes, the product validation section confirms it is qualified according to JEDEC Standard.

What is the gate threshold voltage range for the N-channel?

The gate threshold voltage (V_GS(th)) ranges from 1.1 V to 2.7 V at I_D = 1000 μA.