ISC018N08NM6ATMA1

$1.72

Description：TRENCH 40<-<100V
Series：-

SKU:018da71f4f2e Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRENCH 40<-<100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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ISC018N08NM6ATMA1

Overview

ISC018N08NM6ATMA1 is an OptiMOS 6 n-channel power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 230 A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 1.8 mΩ at 10 V gate drive and a typical total gate charge (Qg) of 63 nC at 10 V. It operates within a temperature range of -55°C to +175°C and utilizes a SuperSO8 Dual-Side Cooling package.

Feature Summary

Dual-side cooling capability for enhanced thermal dissipation
Optimized for high-frequency switching applications
High avalanche energy rating for robust operation

Applications

Motor control systems
Synchronous rectification circuits
Switch-mode power supplies (SMPS)

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging and tape specifications. Ensure compatibility with the required surface-mount assembly process for the SuperSO8 package. Cross-reference the datasheet version to validate electrical parameters before finalizing procurement orders.

Selection Notes

Select this component when an 80 V n-channel MOSFET with low on-resistance and high current handling is required. The dual-side cooling package is suitable for applications demanding efficient heat dissipation in compact spaces. Verify that the gate drive voltage supports the specified Rds(on) performance metrics.

Part Context

This part belongs to the OptiMOS 6 family, which represents advanced silicon technology from Infineon. The series focuses on improving the figure of merit (FOM) through reduced gate charge and on-resistance. It is designed for industrial and automotive-grade power switching applications requiring high reliability.

Replacement Considerations

Direct substitutes include ISC014N08NM6SCATMA1 for lower resistance or IQE036N08NM6ATMA1 for different current ratings. Verify pinout compatibility and thermal characteristics before substitution. Consult official replacement guides for cross-referencing within the OptiMOS portfolio.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.